2SA679 Bipolar Transistor

Characteristics of 2SA679 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -120 V
  • Collector-Base Voltage, max: -120 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -12 A
  • Collector Dissipation: 100 W
  • DC Current Gain (hfe): 40 to 140
  • Transition Frequency, min: 6 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-3

Pinout of 2SA679

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA679 transistor can have a current gain of 40 to 140. The gain of the 2SA679-R will be in the range from 40 to 80, for the 2SA679-Y it will be in the range from 70 to 140.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA679 might only be marked "A679".

Complementary NPN transistor

The complementary NPN transistor to the 2SA679 is the 2SC1079.

Replacement and Equivalent for 2SA679 transistor

You can replace the 2SA679 with the 2SA1041, 2SA1043, 2SA908, 2SA909, 2SB554, 2SB555, 2SB556, 2SB697, 2SB697K, 2SB723, MJ15002, MJ15002G, MJ15004 or MJ15004G.
If you find an error please send an email to mail@el-component.com