2SB1417-P Bipolar Transistor

• Type: PNP
• Collector-Emitter Voltage, max: -60 V
• Collector-Base Voltage, max: -60 V
• Emitter-Base Voltage, max: -6 V
• Collector Current − Continuous, max: -3 A
• Collector Dissipation: 15 W
• DC Current Gain (h_fe): 120 to 250
• Transition Frequency, min: 30 MHz
• Operating and Storage Junction Temperature Range: -55 to +150 °C
• Package: MT-4

Here is an image showing the pin diagram of this transistor.The 2SB1417-P transistor can have a current gain of 120 to 250. The gain of the 2SB1417 will be in the range from 70 to 250, for the 2SB1417-Q it will be in the range from 70 to 150.Sometimes the "2S" prefix is not marked on the package - the 2SB1417-P might only be marked "B1417-P".The complementary NPN transistor to the 2SB1417-P is the 2SD2137-P.The BDP950 (SOT-223) is the SMD version of the 2SB1417-P transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.You can replace the 2SB1417-P with the 2SB1417A or 2SB1417A-P.