2SB1417 Bipolar Transistor

Characteristics of 2SB1417 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -3 A
  • Collector Dissipation: 15 W
  • DC Current Gain (hfe): 70 to 250
  • Transition Frequency, min: 30 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: MT-4

Pinout of 2SB1417

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1417 transistor can have a current gain of 70 to 250. The gain of the 2SB1417-P will be in the range from 120 to 250, for the 2SB1417-Q it will be in the range from 70 to 150.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1417 might only be marked "B1417".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1417 is the 2SD2137.

Replacement and Equivalent for 2SB1417 transistor

You can replace the 2SB1417 with the 2SB1417A.
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