2SB1417A Bipolar Transistor

Characteristics of 2SB1417A Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -3 A
  • Collector Dissipation: 15 W
  • DC Current Gain (hfe): 70 to 250
  • Transition Frequency, min: 30 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: MT-4

Pinout of 2SB1417A

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1417A transistor can have a current gain of 70 to 250. The gain of the 2SB1417A-P will be in the range from 120 to 250, for the 2SB1417A-Q it will be in the range from 70 to 150.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1417A might only be marked "B1417A".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1417A is the 2SD2137A.

SMD Version of 2SB1417A transistor

The BDP952 (SOT-223) is the SMD version of the 2SB1417A transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.
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