2SB1159-S Bipolar Transistor

Characteristics of 2SB1159-S Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -140 V
  • Collector-Base Voltage, max: -140 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -7 A
  • Collector Dissipation: 80 W
  • DC Current Gain (hfe): 80 to 160
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3PF

Pinout of 2SB1159-S

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1159-S transistor can have a current gain of 80 to 160. The gain of the 2SB1159 will be in the range from 60 to 200, for the 2SB1159-P it will be in the range from 100 to 200, for the 2SB1159-Q it will be in the range from 60 to 120.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1159-S might only be marked "B1159-S".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1159-S is the 2SD1714-S.

Replacement and Equivalent for 2SB1159-S transistor

You can replace the 2SB1159-S with the 2SA1673, 2SA1860, 2SA1909, 2SA1987, 2SA1987-O, 2SB1056, 2SB1057, 2SB1160, 2SB1160-S, 2SB1161, 2SB1161-S or FJAF4210.
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