2SB1160-S Bipolar Transistor
Characteristics of 2SB1160-S Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -150 V
- Collector-Base Voltage, max: -150 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -9 A
- Collector Dissipation: 100 W
- DC Current Gain (hfe): 80 to 160
- Transition Frequency, min: 20 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-3PF
Pinout of 2SB1160-S
Classification of hFE
Marking
Complementary NPN transistor
Replacement and Equivalent for 2SB1160-S transistor
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