2SB1110-C Bipolar Transistor

Characteristics of 2SB1110-C Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -200 V
  • Collector-Base Voltage, max: -200 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 1.25 W
  • DC Current Gain (hfe): 100 to 200
  • Transition Frequency, min: 140 MHz
  • Operating and Storage Junction Temperature Range: -50 to +150 °C
  • Package: TO-126

Pinout of 2SB1110-C

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1110-C transistor can have a current gain of 100 to 200. The gain of the 2SB1110 will be in the range from 60 to 320, for the 2SB1110-B it will be in the range from 60 to 120, for the 2SB1110-D it will be in the range from 160 to 320.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1110-C might only be marked "B1110-C".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1110-C is the 2SD1610-C.

SMD Version of 2SB1110-C transistor

The BF623 (SOT-89) and BF823 (SOT-23) is the SMD version of the 2SB1110-C transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SB1110-C transistor

You can replace the 2SB1110-C with the 2SA1156, 2SA1156K, 2SA1210, 2SA1210-R, 2SA1352, 2SA1352-E, 2SA1353, 2SA1353-E, 2SA1380, 2SA1380-E, 2SA1381, 2SA1381-E, 2SA1406, 2SA1406-E, 2SA1407, 2SA1407-E, 2SA1478, 2SA1478-E, 2SA1479, 2SA1479-E, 2SA1480, 2SA1480-E, 2SA1540, 2SA1540-E, 2SA1541, 2SA1541-E, KSA1156, KSA1156Y, KSA1381, KSA1381-E, KSE350, KTA1703, KTA1703-Y, MJE350 or MJE350G.
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