2SA636A-N Bipolar Transistor
Characteristics of 2SA636A-N Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -60 V
- Collector-Base Voltage, max: -70 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -3 A
- Collector Dissipation: 10 W
- DC Current Gain (hfe): 40 to 60
- Transition Frequency, min: 45 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-202
Pinout of 2SA636A-N
Classification of hFE
Marking
Complementary NPN transistor
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