2SA636A-K Bipolar Transistor

Characteristics of 2SA636A-K Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -70 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -3 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 120 to 250
  • Transition Frequency, min: 45 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-202

Pinout of 2SA636A-K

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA636A-K transistor can have a current gain of 120 to 250. The gain of the 2SA636A will be in the range from 40 to 250, for the 2SA636A-L it will be in the range from 80 to 160, for the 2SA636A-M it will be in the range from 50 to 100, for the 2SA636A-N it will be in the range from 40 to 60.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA636A-K might only be marked "A636A-K".

Complementary NPN transistor

The complementary NPN transistor to the 2SA636A-K is the 2SC1098A-K.

SMD Version of 2SA636A-K transistor

The NZT660 (SOT-223) is the SMD version of the 2SA636A-K transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.
If you find an error please send an email to mail@el-component.com