2SA512-R Bipolar Transistor

Characteristics of 2SA512-R Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -1.5 A
  • Collector Dissipation: 8 W
  • DC Current Gain (hfe): 30 to 90
  • Transition Frequency, min: 60 MHz
  • Operating and Storage Junction Temperature Range: -65 to +175 °C
  • Package: TO-39

Pinout of 2SA512-R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA512-R transistor can have a current gain of 30 to 90. The gain of the 2SA512 will be in the range from 30 to 150, for the 2SA512-O it will be in the range from 50 to 150.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA512-R might only be marked "A512-R".

Complementary NPN transistor

The complementary NPN transistor to the 2SA512-R is the 2SC512-R.

Replacement and Equivalent for 2SA512-R transistor

You can replace the 2SA512-R with the 2N4406, 2N5151, 2N5322, 2N5333, 2N6190, 2N6192, 2SA510 or 2SA510-R.
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