2SA510 Bipolar Transistor

Characteristics of 2SA510 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -120 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -1.5 A
  • Collector Dissipation: 8 W
  • DC Current Gain (hfe): 30 to 150
  • Transition Frequency, min: 60 MHz
  • Operating and Storage Junction Temperature Range: -65 to +175 °C
  • Package: TO-39

Pinout of 2SA510

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA510 transistor can have a current gain of 30 to 150. The gain of the 2SA510-O will be in the range from 50 to 150, for the 2SA510-R it will be in the range from 30 to 90.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA510 might only be marked "A510".

Complementary NPN transistor

The complementary NPN transistor to the 2SA510 is the 2SC510.

Replacement and Equivalent for 2SA510 transistor

You can replace the 2SA510 with the 2N5322.
If you find an error please send an email to mail@el-component.com