2SA512-O Bipolar Transistor

Characteristics of 2SA512-O Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -1.5 A
  • Collector Dissipation: 8 W
  • DC Current Gain (hfe): 50 to 150
  • Transition Frequency, min: 60 MHz
  • Operating and Storage Junction Temperature Range: -65 to +175 °C
  • Package: TO-39

Pinout of 2SA512-O

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA512-O transistor can have a current gain of 50 to 150. The gain of the 2SA512 will be in the range from 30 to 150, for the 2SA512-R it will be in the range from 30 to 90.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA512-O might only be marked "A512-O".

Complementary NPN transistor

The complementary NPN transistor to the 2SA512-O is the 2SC512-O.

SMD Version of 2SA512-O transistor

The FMMT551 (SOT-23) is the SMD version of the 2SA512-O transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SA512-O transistor

You can replace the 2SA512-O with the 2N5322, 2N5323, 2SA510 or 2SA510-O.
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