2SA512-O Bipolar Transistor
Characteristics of 2SA512-O Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -60 V
- Collector-Base Voltage, max: -80 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -1.5 A
- Collector Dissipation: 8 W
- DC Current Gain (hfe): 50 to 150
- Transition Frequency, min: 60 MHz
- Operating and Storage Junction Temperature Range: -65 to +175 °C
- Package: TO-39
Pinout of 2SA512-O
Classification of hFE
Marking
Complementary NPN transistor
SMD Version of 2SA512-O transistor
Replacement and Equivalent for 2SA512-O transistor
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