2SA1370-E Bipolar Transistor

Characteristics of 2SA1370-E Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -200 V
  • Collector-Base Voltage, max: -200 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 1 W
  • DC Current Gain (hfe): 100 to 200
  • Transition Frequency, min: 150 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92MOD

Pinout of 2SA1370-E

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1370-E transistor can have a current gain of 100 to 200. The gain of the 2SA1370 will be in the range from 40 to 320, for the 2SA1370-C it will be in the range from 40 to 80, for the 2SA1370-D it will be in the range from 60 to 120, for the 2SA1370-F it will be in the range from 160 to 320.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1370-E might only be marked "A1370-E".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1370-E is the 2SC3467-E.

SMD Version of 2SA1370-E transistor

The BF623 (SOT-89) and BF823 (SOT-23) is the SMD version of the 2SA1370-E transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SA1370-E transistor

You can replace the 2SA1370-E with the 2SA1371, 2SA1371-E, 2SA1624, 2SA1624-E, 2SA1625, 2SA1625-K, KSA1625, KSA1625-K, KTA1277, KTA1277Y or KTA1279.
If you find an error please send an email to mail@el-component.com