2SA1091-O Bipolar Transistor

Characteristics of 2SA1091-O Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -300 V
  • Collector-Base Voltage, max: -300 V
  • Emitter-Base Voltage, max: -8 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.4 W
  • DC Current Gain (hfe): 50 to 150
  • Transition Frequency, min: 60 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of 2SA1091-O

The 2SA1091-O is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1091-O transistor can have a current gain of 50 to 150. The gain of the 2SA1091 will be in the range from 30 to 150, for the 2SA1091-R it will be in the range from 30 to 90.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1091-O might only be marked "A1091-O".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1091-O is the 2SC2551-O.

SMD Version of 2SA1091-O transistor

The 2SA1721 (SOT-23), 2SA1721-O (SOT-23), BF621 (SOT-89), BF821 (SOT-23) and PMBTA92 (SOT-23) is the SMD version of the 2SA1091-O transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SA1091-O transistor

You can replace the 2SA1091-O with the 2SA1371, 2SA1625, KSA1625 or KTA1279.
If you find an error please send an email to mail@el-component.com