2SA1169-P Bipolar Transistor
Characteristics of 2SA1169-P Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -200 V
- Collector-Base Voltage, max: -200 V
- Emitter-Base Voltage, max: -6 V
- Collector Current − Continuous, max: -15 A
- Collector Dissipation: 150 W
- DC Current Gain (hfe): 70 to 140
- Transition Frequency, min: 20 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: MT-200
Pinout of 2SA1169-P
Classification of hFE
Marking
Complementary NPN transistor
Replacement and Equivalent for 2SA1169-P transistor
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