2SA1170 Bipolar Transistor

Characteristics of 2SA1170 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -200 V
  • Collector-Base Voltage, max: -200 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -17 A
  • Collector Dissipation: 200 W
  • DC Current Gain (hfe): 50 to 140
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: MT-200

Pinout of 2SA1170

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1170 transistor can have a current gain of 50 to 140. The gain of the 2SA1170-O will be in the range from 50 to 100, for the 2SA1170-Y it will be in the range from 70 to 140.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1170 might only be marked "A1170".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1170 is the 2SC2774.

Replacement and Equivalent for 2SA1170 transistor

You can replace the 2SA1170 with the 2SA1295 or 2SA1494.
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