2SC2773-P Bipolar Transistor

Characteristics of 2SC2773-P Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 200 V
  • Collector-Base Voltage, max: 200 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 15 A
  • Collector Dissipation: 150 W
  • DC Current Gain (hfe): 70 to 140
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: MT-200

Pinout of 2SC2773-P

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SC2773-P transistor can have a current gain of 70 to 140. The gain of the 2SC2773 will be in the range from 50 to 180, for the 2SC2773-O it will be in the range from 50 to 100, for the 2SC2773-Y it will be in the range from 90 to 180.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SC2773-P might only be marked "C2773-P".

Complementary PNP transistor

The complementary PNP transistor to the 2SC2773-P is the 2SA1169-P.

Replacement and Equivalent for 2SC2773-P transistor

You can replace the 2SC2773-P with the 2SC2774, 2SC2774-Y, 2SC3264, 2SC3264-Y, 2SC3857, 2SC3857-P, 2SC3858 or 2SC3858-P.
If you find an error please send an email to mail@el-component.com