2SA1163-GR Bipolar Transistor

Characteristics of 2SA1163-GR Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -120 V
  • Collector-Base Voltage, max: -120 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.15 W
  • DC Current Gain (hfe): 200 to 400
  • Transition Frequency, min: 100 MHz
  • Noise Figure, max: 1 dB
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-23

Pinout of 2SA1163-GR

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1163-GR transistor can have a current gain of 200 to 400. The gain of the 2SA1163 will be in the range from 200 to 700, for the 2SA1163-BL it will be in the range from 350 to 700.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1163-GR might only be marked "A1163-GR".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1163-GR is the 2SC2713-GR.

Replacement and Equivalent for 2SA1163-GR transistor

You can replace the 2SA1163-GR with the 2SA1312, 2SA1312-GR, KST93 or PBHV9115T.
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