2SA1156M Bipolar Transistor

Characteristics of 2SA1156M Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -400 V
  • Collector-Base Voltage, max: -400 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -0.5 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 40 to 80
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SA1156M

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1156M transistor can have a current gain of 40 to 80. The gain of the 2SA1156 will be in the range from 30 to 200, for the 2SA1156K it will be in the range from 100 to 200, for the 2SA1156L it will be in the range from 60 to 120, for the 2SA1156N it will be in the range from 30 to 60.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1156M might only be marked "A1156M".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1156M is the 2SC2752K.

Replacement and Equivalent for 2SA1156M transistor

You can replace the 2SA1156M with the KSA1156 or KSA1156R.
If you find an error please send an email to mail@el-component.com