2SC2681-Q Bipolar Transistor

Characteristics of 2SC2681-Q Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 115 V
  • Collector-Base Voltage, max: 115 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 10 A
  • Collector Dissipation: 100 W
  • DC Current Gain (hfe): 100 to 200
  • Transition Frequency, min: 80 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3PF

Pinout of 2SC2681-Q

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SC2681-Q transistor can have a current gain of 100 to 200. The gain of the 2SC2681 will be in the range from 60 to 200, for the 2SC2681-R it will be in the range from 60 to 120.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SC2681-Q might only be marked "C2681-Q".

Complementary PNP transistor

The complementary PNP transistor to the 2SC2681-Q is the 2SA1141-Q.

Replacement and Equivalent for 2SC2681-Q transistor

You can replace the 2SC2681-Q with the 2SD1716 or 2SD1716-P.
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