2SC2681-Q Bipolar Transistor
Characteristics of 2SC2681-Q Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 115 V
- Collector-Base Voltage, max: 115 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 10 A
- Collector Dissipation: 100 W
- DC Current Gain (hfe): 100 to 200
- Transition Frequency, min: 80 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-3PF
Pinout of 2SC2681-Q
Classification of hFE
Marking
Complementary PNP transistor
Replacement and Equivalent for 2SC2681-Q transistor
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