2SA1141-R Bipolar Transistor

Characteristics of 2SA1141-R Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -115 V
  • Collector-Base Voltage, max: -115 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -10 A
  • Collector Dissipation: 100 W
  • DC Current Gain (hfe): 60 to 120
  • Transition Frequency, min: 90 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3PF

Pinout of 2SA1141-R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1141-R transistor can have a current gain of 60 to 120. The gain of the 2SA1141 will be in the range from 60 to 200, for the 2SA1141-Q it will be in the range from 100 to 200.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1141-R might only be marked "A1141-R".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1141-R is the 2SC2681-R.

Replacement and Equivalent for 2SA1141-R transistor

You can replace the 2SA1141-R with the 2SA1673, 2SA1860, 2SA1909, 2SA1987, 2SB1161, 2SB1161-Q or FJAF4210.
If you find an error please send an email to mail@el-component.com