2SA1029C Bipolar Transistor

Characteristics of 2SA1029C Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -30 V
  • Collector-Base Voltage, max: -30 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.3 W
  • DC Current Gain (hfe): 160 to 320
  • Transition Frequency, min: 230 MHz
  • Noise Figure, max: 4 dB
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of 2SA1029C

The 2SA1029C is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right,
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1029C transistor can have a current gain of 160 to 320. The gain of the 2SA1029 will be in the range from 100 to 500, for the 2SA1029B it will be in the range from 100 to 200, for the 2SA1029D it will be in the range from 250 to 500.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1029C might only be marked "A1029C".

SMD Version of 2SA1029C transistor

The BC858 (SOT-23), BC858W (SOT-323), BC859 (SOT-23) and BC859W (SOT-323) is the SMD version of the 2SA1029C transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SA1029C transistor

You can replace the 2SA1029C with the 2SA1030 or 2SA1030C.
If you find an error please send an email to mail@el-component.com