2SA1029 Bipolar Transistor
Characteristics of 2SA1029 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -30 V
- Collector-Base Voltage, max: -30 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -0.1 A
- Collector Dissipation: 0.3 W
- DC Current Gain (hfe): 100 to 500
- Transition Frequency, min: 230 MHz
- Noise Figure, max: 4 dB
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-92
Pinout of 2SA1029
Here is an image showing the pin diagram of this transistor.
Classification of hFE
Marking
If you find an error please send an email to mail@el-component.com