2SA1029 Bipolar Transistor

Characteristics of 2SA1029 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -30 V
  • Collector-Base Voltage, max: -30 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.3 W
  • DC Current Gain (hfe): 100 to 500
  • Transition Frequency, min: 230 MHz
  • Noise Figure, max: 4 dB
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of 2SA1029

The 2SA1029 is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right,
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1029 transistor can have a current gain of 100 to 500. The gain of the 2SA1029B will be in the range from 100 to 200, for the 2SA1029C it will be in the range from 160 to 320, for the 2SA1029D it will be in the range from 250 to 500.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1029 might only be marked "A1029".
If you find an error please send an email to mail@el-component.com