2N5819 Bipolar Transistor

Characteristics of 2N5819 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -40 V
  • Collector-Base Voltage, max: -50 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.75 A
  • Collector Dissipation: 0.625 W
  • DC Current Gain (hfe): 150 to 300
  • Transition Frequency, min: 135 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-92

Pinout of 2N5819

The 2N5819 is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the collector, base, and emitter leads.
Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the 2N5819 is the 2N5818.

SMD Version of 2N5819 transistor

The 2SA1366 (SOT-23), 2SA1366-E (SOT-23), 2SA1518 (SOT-23), 2SA1519 (SOT-23), 2SA1520 (SOT-23), 2SA1521 (SOT-23), 2SB710A (SOT-23), BC807 (SOT-23), BC807W (SOT-323), BCX17 (SOT-23), FMMT2907 (SOT-23), FMMT2907R (SOT-23), KN2907S (SOT-23), KTN2907S (SOT-23), KTN2907U (SOT-323), PMBT2907 (SOT-23) and PMST2907 (SOT-23) is the SMD version of the 2N5819 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2N5819 transistor

You can replace the 2N5819 with the BC327, BC486, BC488 or BC490.
If you find an error please send an email to mail@el-component.com