2SA1366-E Bipolar Transistor

Characteristics of 2SA1366-E Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -50 V
  • Collector-Base Voltage, max: -55 V
  • Emitter-Base Voltage, max: -4 V
  • Collector Current − Continuous, max: -0.4 A
  • Collector Dissipation: 0.15 W
  • DC Current Gain (hfe): 150 to 300
  • Transition Frequency, min: 150 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-23

Pinout of 2SA1366-E

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1366-E transistor can have a current gain of 150 to 300. The gain of the 2SA1366 will be in the range from 90 to 500, for the 2SA1366-D it will be in the range from 90 to 180, for the 2SA1366-F it will be in the range from 250 to 500.

Marking

The 2SA1366-E transistor is marked as "CE".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1366-E is the 2SC3441-E.

Replacement and Equivalent for 2SA1366-E transistor

You can replace the 2SA1366-E with the 2SA1518, 2SA1519, 2SA1520, 2SA1521, 2SB710A, FMMT2907A, FMMT2907AR, FMMT591, FMMT591Q, FMMTA55, FMMTA56, KN2907AS, KST2907A, KST55, KST56, KTN2907AS, MMBT2907A, MMBT4354, MMBT4355, MMBTA55, MMBTA56, PMBT2907A, PMBTA56, PMST2907A, SMBTA55 or SMBTA56.
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