2N5815 Bipolar Transistor
Characteristics of 2N5815 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -40 V
- Collector-Base Voltage, max: -50 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -0.75 A
- Collector Dissipation: 0.625 W
- DC Current Gain (hfe): 60 to 120
- Transition Frequency, min: 100 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-92
Pinout of 2N5815
Here is an image showing the pin diagram of this transistor.
Complementary NPN transistor
SMD Version of 2N5815 transistor
Replacement and Equivalent for 2N5815 transistor
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