2N5814 Bipolar Transistor

Characteristics of 2N5814 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 40 V
  • Collector-Base Voltage, max: 50 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 0.75 A
  • Collector Dissipation: 0.625 W
  • DC Current Gain (hfe): 60 to 120
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-92

Pinout of 2N5814

The 2N5814 is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the collector, base, and emitter leads.
Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the 2N5814 is the 2N5815.

SMD Version of 2N5814 transistor

The 2SC3912 (SOT-23), 2SC3913 (SOT-23), 2SC3914 (SOT-23), 2SC3915 (SOT-23) and MMBT4400 (SOT-23) is the SMD version of the 2N5814 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2N5814 transistor

You can replace the 2N5814 with the 2N5820, BC485, BC485L, BC487, BC487L, BC489 or BC489L.
If you find an error please send an email to mail@el-component.com