2N5821 Bipolar Transistor
Characteristics of 2N5821 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -60 V
- Collector-Base Voltage, max: -70 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -0.75 A
- Collector Dissipation: 0.625 W
- DC Current Gain (hfe): 60 to 120
- Transition Frequency, min: 100 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-92
Pinout of 2N5821
Here is an image showing the pin diagram of this transistor.
Complementary NPN transistor
Replacement and Equivalent for 2N5821 transistor
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