2N5832 Bipolar Transistor

Characteristics of 2N5832 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 180 V
  • Collector-Base Voltage, max: 200 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 0.6 A
  • Collector Dissipation: 0.625 W
  • DC Current Gain (hfe): 175 to 500
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of 2N5832

The 2N5832 is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads.
Here is an image showing the pin diagram of this transistor.

SMD Version of 2N5832 transistor

The KST43 (SOT-23) is the SMD version of the 2N5832 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.
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