2N5496 Bipolar Transistor

Characteristics of 2N5496 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 70 V
  • Collector-Base Voltage, max: 90 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 7 A
  • Collector Dissipation: 50 W
  • DC Current Gain (hfe): 20 to 100
  • Transition Frequency, min: 1 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of 2N5496

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for 2N5496 transistor

You can replace the 2N5496 with the 2N6131, 2N6488, 2N6488G, BD709, BD711, BD743B, BD743C, BD909, BD911, BDT93, BDT93F, BDT95, BDT95F, MJF3055 or MJF3055G.
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