PN100 Bipolar Transistor

Characteristics of PN100 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 45 V
  • Collector-Base Voltage, max: 75 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 0.5 A
  • Collector Dissipation: 0.625 W
  • DC Current Gain (hfe): 100 to 450
  • Transition Frequency, min: 250 MHz
  • Noise Figure, max: 5 dB
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-92

Pinout of PN100

The PN100 is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads.
Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the PN100 is the PN200.

SMD Version of PN100 transistor

The MMBT100 (SOT-23) is the SMD version of the PN100 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for PN100 transistor

You can replace the PN100 with the KSP05, KSP06, MPS651, MPS651G, MPSA05, MPSA05G, MPSA06, MPSA06G, MPSW05, MPSW05G, MPSW06 or MPSW06G.
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