MPS651G Bipolar Transistor
Characteristics of MPS651G Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 60 V
- Collector-Base Voltage, max: 80 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 2 A
- Collector Dissipation: 0.625 W
- DC Current Gain (hfe): 75
- Transition Frequency, min: 75 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-92
- The MPS651G is the lead-free version of the MPS651 transistor
Pinout of MPS651G
Here is an image showing the pin diagram of this transistor.
Complementary PNP transistor
SMD Version of MPS651G transistor
Replacement and Equivalent for MPS651G transistor
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