MMBT3906TT1G Bipolar Transistor

Characteristics of MMBT3906TT1G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -40 V
  • Collector-Base Voltage, max: -40 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.2 A
  • Collector Dissipation: 0.15 W
  • DC Current Gain (hfe): 100 to 300
  • Transition Frequency, min: 250 MHz
  • Noise Figure, max: 5 dB
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-416
  • The MMBT3906TT1G is the lead-free version of the MMBT3906TT1 transistor

Pinout of MMBT3906TT1G

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for MMBT3906TT1G transistor

You can replace the MMBT3906TT1G with the MMBT3906TT1.
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