MMBT3906TT1 Bipolar Transistor

Characteristics of MMBT3906TT1 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -40 V
  • Collector-Base Voltage, max: -40 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.2 A
  • Collector Dissipation: 0.15 W
  • DC Current Gain (hfe): 100 to 300
  • Transition Frequency, min: 250 MHz
  • Noise Figure, max: 5 dB
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-416

Pinout of MMBT3906TT1

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for MMBT3906TT1 transistor

You can replace the MMBT3906TT1 with the MMBT3906TT1G.

Lead-free Version

The MMBT3906TT1G transistor is the lead-free version of the MMBT3906TT1.
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