MJ11012G Bipolar Transistor

Characteristics of MJ11012G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 30 A
  • Collector Dissipation: 200 W
  • DC Current Gain (hfe): 1000
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3
  • The MJ11012G is the lead-free version of the MJ11012 transistor

Pinout of MJ11012G

Here is an image showing the pin diagram of this transistor.

Equivalent circuit

MJ11012G equivalent circuit

Complementary PNP transistor

The complementary PNP transistor to the MJ11012G is the MJ11011G.

Replacement and Equivalent for MJ11012G transistor

You can replace the MJ11012G with the MJ11012, MJ11014, MJ11014G, MJ11016, MJ11016G, MJ11028, MJ11028G, MJ11030, MJ11030G, MJ11032 or MJ11032G.
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