MJ11012 Bipolar Transistor

Characteristics of MJ11012 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 30 A
  • Collector Dissipation: 200 W
  • DC Current Gain (hfe): 1000
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of MJ11012

Here is an image showing the pin diagram of this transistor.

Equivalent circuit

MJ11012 equivalent circuit

Complementary PNP transistor

The complementary PNP transistor to the MJ11012 is the MJ11011.

Replacement and Equivalent for MJ11012 transistor

You can replace the MJ11012 with the MJ11012G, MJ11014, MJ11014G, MJ11016, MJ11016G, MJ11028, MJ11028G, MJ11030, MJ11030G, MJ11032 or MJ11032G.

Lead-free Version

The MJ11012G transistor is the lead-free version of the MJ11012.
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