BST40 Bipolar Transistor
Characteristics of BST40 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 350 V
- Collector-Base Voltage, max: 400 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 0.1 A
- Collector Dissipation: 1.3 W
- DC Current Gain (hfe): 0 to 40
- Transition Frequency, min: 70 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: SOT-89
Pinout of BST40
Marking
Complementary PNP transistor
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