BST16 Bipolar Transistor
Characteristics of BST16 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -300 V
- Collector-Base Voltage, max: -350 V
- Emitter-Base Voltage, max: -6 V
- Collector Current − Continuous, max: -0.2 A
- Collector Dissipation: 1.3 W
- DC Current Gain (hfe): 30 to 120
- Transition Frequency, min: 15 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: SOT-89
Pinout of BST16
Complementary NPN transistor
If you find an error please send an email to mail@el-component.com