BDT42BF Bipolar Transistor
Characteristics of BDT42BF Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -80 V
- Collector-Base Voltage, max: -120 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -6 A
- Collector Dissipation: 65 W
- DC Current Gain (hfe): 15 to 75
- Transition Frequency, min: 3 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-220F
- Electrically Similar to the Popular BDT42B transistor
Pinout of BDT42BF
Complementary NPN transistor
Replacement and Equivalent for BDT42BF transistor
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