BCW65A Bipolar Transistor

Characteristics of BCW65A Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 32 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 0.8 A
  • Collector Dissipation: 0.35 W
  • DC Current Gain (hfe): 100 to 250
  • Transition Frequency, min: 170 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-23

Pinout of BCW65A

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BCW65A transistor can have a current gain of 100 to 250. The gain of the BCW65 will be in the range from 100 to 630, for the BCW65B it will be in the range from 160 to 400, for the BCW65C it will be in the range from 250 to 630.

Complementary PNP transistor

The complementary PNP transistor to the BCW65A is the BCW67A.

Replacement and Equivalent for BCW65A transistor

You can replace the BCW65A with the BCW66, BCW66F, FMMT491, FMMT491Q, FMMT619 or MMBT2222A.
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