BCW65A Bipolar Transistor
Characteristics of BCW65A Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 32 V
- Collector-Base Voltage, max: 60 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 0.8 A
- Collector Dissipation: 0.35 W
- DC Current Gain (hfe): 100 to 250
- Transition Frequency, min: 170 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: SOT-23
Pinout of BCW65A
Classification of hFE
Complementary PNP transistor
Replacement and Equivalent for BCW65A transistor
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