2SD826 Bipolar Transistor

Characteristics of 2SD826 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 20 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 5 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 120 to 560
  • Transition Frequency, min: 120 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SD826

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD826 transistor can have a current gain of 120 to 560. The gain of the 2SD826-E will be in the range from 120 to 200, for the 2SD826-F it will be in the range from 160 to 320, for the 2SD826-G it will be in the range from 280 to 560.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD826 might only be marked "D826".

Replacement and Equivalent for 2SD826 transistor

You can replace the 2SD826 with the 2SD1685.
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