2SD826 Bipolar Transistor
Characteristics of 2SD826 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 20 V
- Collector-Base Voltage, max: 60 V
- Emitter-Base Voltage, max: 6 V
- Collector Current − Continuous, max: 5 A
- Collector Dissipation: 10 W
- DC Current Gain (hfe): 120 to 560
- Transition Frequency, min: 120 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-126
Pinout of 2SD826
Classification of hFE
Marking
Replacement and Equivalent for 2SD826 transistor
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