2SD1685 Bipolar Transistor

Characteristics of 2SD1685 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 20 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 5 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 120 to 560
  • Transition Frequency, min: 120 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SD1685

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1685 transistor can have a current gain of 120 to 560. The gain of the 2SD1685-E will be in the range from 120 to 200, for the 2SD1685-f it will be in the range from 160 to 320, for the 2SD1685-G it will be in the range from 280 to 560.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1685 might only be marked "D1685".

Replacement and Equivalent for 2SD1685 transistor

You can replace the 2SD1685 with the 2SD826.
If you find an error please send an email to mail@el-component.com