2SB766A-S Bipolar Transistor

Characteristics of 2SB766A-S Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -50 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -1 A
  • Collector Dissipation: 1 W
  • DC Current Gain (hfe): 170 to 340
  • Transition Frequency, min: 200 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-89

Pinout of 2SB766A-S

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB766A-S transistor can have a current gain of 170 to 340. The gain of the 2SB766A will be in the range from 85 to 340, for the 2SB766A-Q it will be in the range from 85 to 170, for the 2SB766A-R it will be in the range from 120 to 240.

Marking

The 2SB766A-S transistor is marked as "BS".

Complementary NPN transistor

The complementary NPN transistor to the 2SB766A-S is the 2SD874A-S.

Replacement and Equivalent for 2SB766A-S transistor

You can replace the 2SB766A-S with the 2SB1115, 2SB1115A, 2SB1122, 2SB1123, 2SB1124, 2STF2360 or 2STF2550.
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