2SB766A-R Bipolar Transistor

Characteristics of 2SB766A-R Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -50 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -1 A
  • Collector Dissipation: 1 W
  • DC Current Gain (hfe): 120 to 240
  • Transition Frequency, min: 200 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-89

Pinout of 2SB766A-R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB766A-R transistor can have a current gain of 120 to 240. The gain of the 2SB766A will be in the range from 85 to 340, for the 2SB766A-Q it will be in the range from 85 to 170, for the 2SB766A-S it will be in the range from 170 to 340.

Marking

The 2SB766A-R transistor is marked as "BR".

Complementary NPN transistor

The complementary NPN transistor to the 2SB766A-R is the 2SD874A-R.

Replacement and Equivalent for 2SB766A-R transistor

You can replace the 2SB766A-R with the 2DA1213, 2DA1213Y, 2SA1213, 2SA1213-Y, 2SA1364, 2SB1122, 2SB1123, 2SB1124, 2STF2550, BCX52, BCX52-16, BCX53, BCX53-16, BSR31 or BSR33.
If you find an error please send an email to mail@el-component.com