2SB709A-R Bipolar Transistor

Characteristics of 2SB709A-R Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -45 V
  • Collector-Base Voltage, max: -45 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.2 W
  • DC Current Gain (hfe): 160 to 460
  • Transition Frequency, min: 80 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-23

Pinout of 2SB709A-R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB709A-R transistor can have a current gain of 160 to 460. The gain of the 2SB709A will be in the range from 160 to 460, for the 2SB709A-Q it will be in the range from 160 to 460, for the 2SB709A-S it will be in the range from 160 to 460.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB709A-R might only be marked "B709A-R".

Complementary NPN transistor

The complementary NPN transistor to the 2SB709A-R is the 2SD601A-R.

Replacement and Equivalent for 2SB709A-R transistor

You can replace the 2SB709A-R with the 2SA1037, 2SA1366, 2SA1518, 2SA1519, 2SA1520, 2SA1521, 2SA812, BC807, BC856, BC857, BC860, BCW68, BCX17, FMMTA55, FMMTA56, KSA812, KST55, KST56, MMBT4354, MMBTA55, MMBTA56, PMBTA56, SMBTA55 or SMBTA56.
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