2SA812 Bipolar Transistor

Characteristics of 2SA812 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -50 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.2 W
  • DC Current Gain (hfe): 90 to 600
  • Transition Frequency, min: 180 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-23

Pinout of 2SA812

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA812 transistor can have a current gain of 90 to 600. The gain of the 2SA812-M3 will be in the range from 60 to 90, for the 2SA812-M4 it will be in the range from 90 to 180, for the 2SA812-M5 it will be in the range from 135 to 270, for the 2SA812-M6 it will be in the range from 200 to 400, for the 2SA812-M7 it will be in the range from 300 to 600.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA812 might only be marked "A812".

Complementary NPN transistor

The complementary NPN transistor to the 2SA812 is the 2SC1623.

Replacement and Equivalent for 2SA812 transistor

You can replace the 2SA812 with the 2SA1518, 2SA1519, 2SA1520, 2SA1521, FMMTA55, FMMTA56, KSA812, KST55 or KST56.
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