2SA1162-GR Bipolar Transistor

Characteristics of 2SA1162-GR Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -50 V
  • Collector-Base Voltage, max: -50 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.15 A
  • Collector Dissipation: 0.15 W
  • DC Current Gain (hfe): 200 to 400
  • Transition Frequency, min: 80 MHz
  • Noise Figure, max: 1 dB
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-23

Pinout of 2SA1162-GR

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1162-GR transistor can have a current gain of 200 to 400. The gain of the 2SA1162 will be in the range from 70 to 400, for the 2SA1162-O it will be in the range from 70 to 140, for the 2SA1162-Y it will be in the range from 120 to 240.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1162-GR might only be marked "A1162-GR".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1162-GR is the 2SC2712-GR.

Replacement and Equivalent for 2SA1162-GR transistor

You can replace the 2SA1162-GR with the 2SA1037, 2SA1366, 2SA1518, 2SA1519, 2SA1520, 2SA1521, 2SA1832, 2SA1832-GR, 2STR2160, FMMTA55, FMMTA56, KST55, KST56, KTA1504, KTA1504GL, KTA1504S, KTA1504S-GL, MMBT4354, MMBT4355, MMBTA55, MMBTA56, PMBTA56, SMBTA55 or SMBTA56.
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