2SA1162 Bipolar Transistor

Characteristics of 2SA1162 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -50 V
  • Collector-Base Voltage, max: -50 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.15 A
  • Collector Dissipation: 0.15 W
  • DC Current Gain (hfe): 70 to 400
  • Transition Frequency, min: 80 MHz
  • Noise Figure, max: 1 dB
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-23

Pinout of 2SA1162

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1162 transistor can have a current gain of 70 to 400. The gain of the 2SA1162-GR will be in the range from 200 to 400, for the 2SA1162-O it will be in the range from 70 to 140, for the 2SA1162-Y it will be in the range from 120 to 240.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1162 might only be marked "A1162".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1162 is the 2SC2712.

Replacement and Equivalent for 2SA1162 transistor

You can replace the 2SA1162 with the 2SA1518, 2SA1519, 2SA1520, 2SA1521, 2SA1832, FMMTA55, FMMTA56, KST55, KST56, KTA1504, KTA1504S or MMBT4354.
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