IRLR3410 MOSFET
Specifications of IRLR3410 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 100 V
- Gate-to-Source Voltage, max: ±16 V
- Drain-Source On-State Resistance, max: 105 mΩ
- Continuous Drain Current: 15 A
- Total Gate Charge: 22.7 nC
- Power Dissipation: 52 W
- Package: D-PAK