IRFR4510 MOSFET
Specifications of IRFR4510 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 100 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 13.9 mΩ
- Continuous Drain Current: 63 A
- Total Gate Charge: 54 nC
- Power Dissipation: 143 W
- Package: D-PAK
Pinout of IRFR4510
